Fabrication process of semiconductor substrate

Details Fabrication process of semiconductor substrate Fabrication process of semiconductor substrate

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2198552

SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, saving of resources and reduction of cost are realized by reuse of wafer and the like. Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being an Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate and the second substrate, a step of dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing porous Si and oxidized porous Si layer on the second substrate separated by the division of the porous Si layer.

L'invention est constituée par des substrats SIO (silicium sur isolant) qui peuvent être fabriqués avec une qualité suffisante et une bonne reproductibilité. De plus, on peut économiser les ressources et réduire les coûts en réutilisant les plaquettes et les éléments similaires. Les opérations de réalisation comprennent le soudage d'une surface principale d'un premier substrat à une surface principale d'un second substrat, le premier substrat étant fait de silicium et comportant au moins une couche mince non poreuse formée par la traversée d'une couche de silicium poreuse, l'exposition de la couche de silicium poreuse par la face latérale d'un substrat de soudage constitué du premier et du second substrat, la division de la couche de silicium poreuse par l'oxydation du substrat de soudage et l'enlèvement du silicium poreux et de la couche de silicium poreuse oxydée du second substrat après la division de la couche de silicium poreuse.

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