Fabry-perot modulator

Details Fabry-perot modulator Fabry-perot modulator

G - Physics

02

F

G02F 1/015 (2006.01) G02F 1/21 (2006.01)

Patent

CA 2047196

An asymmetric Fabry-Perot modulator comprises a multiple quantum well (MQW) p- i-n diode (8, 10, 12) defined by a front surface of reflectivity 0.3 and back surface of reflectiv- ity 0.95. The cavity length L is such that reson- ance occurs close to the long wavelength side of the unbiased MQW absorption edge so that application of a bias signal to the MQW (12) causes the reflectivity of the cavity to become close to zero. This arrangement provides a high contrast modulator less sensitive to tem- perature variations and deviations from ideal reflectivities of the front and back surfaces than high-finesse Fabry-Perot modulators.

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