G - Physics – 05 – F
Patent
G - Physics
05
F
G05F 3/26 (2006.01)
Patent
CA 2296829
A low voltage MOSFET-configured current sink/source has an output node coupled to the drain of an output MOSFET, that is current mirror coupled with a diode- connected reference current MOSFET. The output MOSFET has its gate resistor-coupled to the gate of the reference current MOSFET and its drain coupled to the source a third V GS-feedback control MOSFET of a feedback circuit, that includes a further current mirror circuit. This third MOSFET has its gate electrode coupled in common with the drain-gate connection of the reference current MOSFET. The V GS-feedback control MOSFET is coupled with a further current mirror, the output of which is coupled to the gate-coupling resistor. In response to a drop in the drain- source voltage V DS of the output MOSFET so that the point that output MOSFET no longer operates in its saturation region, the V GS-feedback control MOSFET turns on, causing the flow of drain current in the feedback control MOSFET. The further current mirror circuit mirrors this drain current through the gate-coupling resistor, causing a voltage drop across it, so that the value of gate-source voltage applied to the output MOSFET is increased.
Intersil Corporation
Oldham Edward H.
LandOfFree
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