Fermi threshold field effect transistor with reduced gate...

Details Fermi threshold field effect transistor with reduced gate... Fermi threshold field effect transistor with reduced gate...

H - Electricity

01

L

H01L 29/772 (2006.01) H01L 21/265 (2006.01) H01L 27/088 (2006.01) H01L 29/10 (2006.01) H01L 29/78 (2006.01) H01L 29/788 (2006.01)

Patent

CA 2117426

An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an inversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth, and with a conductivity type opposite the substrate conductivity type and the same conductivity type as the drain and source diffusions.

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