G - Physics – 11 – B
Patent
G - Physics
11
B
345/1, 352/32.1
G11B 9/02 (2006.01) G02F 1/05 (2006.01) G11C 13/04 (2006.01)
Patent
CA 1078514
Abstract of the disclosure For amplifying the photosensitivity of a ferroelectric crystal in which information is to be stored, an external field applied to the crystal is created by means of a heavily doped, reduced photocell crystal illuminated uniformly by ra- diation within the absorption band of the crystal. The photo- cell crystal connected to the terminals of the lightly doped, non-reduced ferroelectric crystal, of which the resistivity is very much higher than that of the photocell crystal, deve- lops a very high voltage which relaxes with a high time cons- tant. Such a voltage increases the variations in the birefrac- tion of the ferroelectric crystal.
252539
Huignard Jean-Pierre
Micheron Francois
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