Ferroelectric memory structure

Details Ferroelectric memory structure Ferroelectric memory structure

G - Physics

11

C

352/3

G11C 11/22 (2006.01)

Patent

CA 2035128

Abstract of the Disclosure Architectures for a ferroelectric memory which avoids the half select phenomenon and the problems associated with destructive readout are disclosed. Non-destructive readout is provided by measuring current through the ferroelectric memory as a measure of its resistance. Information is stored in the ferroelectric memory element by altering its resistance through a polarizing voltage. The half select phenomenon is avoided by using isolation techniques. In various embodiments, zener diodes or bipolar junction transistors are used for isolation.

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