G - Physics
05
F
G05F 1/46 (2006.01) H03F 1/30 (2006.01)
Patent
CA 2335220
A circuit for biasing a Field Effect Transistor (FET) is provided. The FET has a gate, a drain, and a source and the circuit comprises a current limiting resistor having a first end and a second end, the first end being connected to the gate; and a closed-loop control circuit connected to the second end, applying and controlling DC voltage to the second end, so that a gate bias voltage that is applied to the gate becomes equal to a reference voltage of a predetermined DC voltage.
Honda Tamaki
Sakamoto Hironori
Takahashi Taketo
Gowling Lafleur Henderson Llp
Japan Radio Co. Ltd.
LandOfFree
Fet bias circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fet bias circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fet bias circuit will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1781860