H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/336 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2757818
A MUGFET and method of manufacturing a MUGFET is shown. The method of manufacturing the MUGFET in-cludes forming temporary spacer gates (16 of FIG. 6) about a plurality of active regions and depositing a dielectric material (18a and in space 20) over the temporary spacer gates, including between the plurality of active regions. The method further includes etching portions of the dielectric material (20) to expose the temporary spacer gates (16) and removing the temporary spacer gates, leaving a space between the active regions and a remaining portion of the dielectric material (18a). The method additionally in-cludes filling the space (20) between the active regions and above the remaining portion of the dielectric material (18a) with a gate material.
La présente invention concerne un MuGFET (MOSFET à grilles multiples) et un procédé de fabrication associé. Le procédé de fabrication d'un MuGFET comprend la formation de grilles d'espacement temporaires (16, fig. 6) autour de plusieurs régions actives, et le dépôt d'un matériau diélectrique (18a, et espace 20) sur les grilles d'espacement temporaires, y compris entre les régions actives. Le procédé comprend, en outre, la gravure de parties du matériau diélectrique (20) afin d'exposer les grilles d'espacement temporaires (16) puis les retirer, en laissant un espace entre les régions actives et une partie restante du matériau diélectrique (18a). Le procédé comprend, de plus, le remplissage de l'espace (20) entre les régions actives et au-dessus de la partie restante du matériau diélectrique (18a) avec un matériau de grille.
Anderson Brent A.
Nowak Edward J.
International Business Machines Corporation
Wang Peter
LandOfFree
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