Field controlled diode (fcd) having mos trench gates

Details Field controlled diode (fcd) having mos trench gates Field controlled diode (fcd) having mos trench gates

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/73 (2006.01) H01L 29/739 (2006.01)

Patent

CA 2021095

A field controlled diode is provided with an insulated gate electrode for controlling the conductivity of the diode. The diode is turned off by applying a gate bias voltage which pinches off the drift region of the device to block current flow in the anode/cathode diode path. The turn-off characteristics of the device are enhanced by including transistor portions in the structure in which the drift region is not pinched off during turn-off to facilitate extraction of stored charge from the diode structure.

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