H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/112
H01L 39/22 (2006.01) H01L 39/14 (2006.01)
Patent
CA 1315015
SZ 9-87-012 ABSTRACT A Field-Effect Device with a Superconducting Channel. A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 1021/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).
582214
Chaudhari Praveen
Mueller Carl Alexander
Wolf Hans Peter
Barrett B.p.
International Business Machines Corporation
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