Field effect semiconductor device

Details Field effect semiconductor device Field effect semiconductor device

H - Electricity

01

L

356/128

H01L 29/76 (2006.01)

Patent

CA 1151774

Abstract of the Disclosure A semiconductor device having a first field-effect device provided in and on a first substrate at a first major surface thereof. The first substrate is of a first conductivity type (except in selected regions), due to the pressure of a first dopant. A plurality of such selected regions intersect the first major surface in a first major surface. The field-effect device comprises a first field-effect device channel region which is located at least in part, in the first substrate. A pair of first field-effect device terminating regions each being of a second conductivity type are each located in one of the selected regions intersecting the first major surface portion such that they are separated by the first field-effect device channel region. A pn junction separates each member of the first field-effect device terminating region pair from remaining portions of the first substrate. The first field-effect device terminating region pair has a second dopant distrib- uted in each member leading to the second conductivity type. The device includes a first field-effect device control gate region which is separated from the first major surface portion by a first insulating layer of a first thickness and located across the first insulating layer from the first field- effect device channel region. The device further includes a first field- effect device shield region separated from the first major surface by a second insulating layer of a second thickness and located across the second insulating layer from substantially all of the member pn junctions where these member pn junctions intersect the first major surface.

405052

Affiliated with

Also associated with

Rating

Field effect semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1087583