Field effect semiconductor device having dipole barrier

Details Field effect semiconductor device having dipole barrier Field effect semiconductor device having dipole barrier

H - Electricity

01

L

H01L 29/772 (2006.01) H01L 29/10 (2006.01) H01L 29/812 (2006.01)

Patent

CA 2323747

A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential barrier and a maximum electric field sufficient to confine electrons to the channel layer.

Un dispositif à semi-conducteur à effet de champ comprend un substrat, une barrière à dipôle formée sur le substrat, une couche de canaux formée sur la barrière à dipôle, ainsi que des électrodes de source, de grille et de drain formées sur la couche de canaux. La barrière à dipôle permet d'obtenir une barrière de potentiel et un champ électrique maximum suffisants pour confiner les électrons dans la couche de canaux.

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