Field effect semiconductor devices

Details Field effect semiconductor devices Field effect semiconductor devices

H - Electricity

01

L

356/126

H01L 29/08 (2006.01) H01L 29/80 (2006.01) H01L 47/02 (2006.01)

Patent

CA 1121519

Abstract of the Disclosure A field effect semiconductor device has a semi-insulator layer composed of a semiconductor material, with an N conductivity type active layer made of the same semiconductor material formed thereon acting as a channel. Spaced apart cathode and anode electrodes are formed on the active layer with the cathode electrode being in ohmic contact with the active layer. In use when a drive voltage is applied across the cathode and anode electrodes to vary the flow of electrons through the active layer and thus the output current, a P conductive region exists beneath the anode electrode which extends through the active layer towards or penetrating into the semiconductor layer to prevent the formation of a negatively charged space charge layer.

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