Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1247755

ABSTRACT OF THE DISCLOSURE A field effect transistor is disclosed which utilizes a semiconductor hetero-junction with high mutual conductance as well as low noise and reduced source resistance. The transistor comprises a gallium indium arsenide mixed crystal semiconductor layer providing a current path, indium phosphide layers easily providing low resistance and formed on or under the gallium indium arsenide mixed crystal semiconductor layer by ion- implantation, a source electrode, a gate electrode and a drain electrode which are formed on the surface of an aluminum indium arsenide mixed crystal semiconductor layer formed on an uppermost layer, and an ion-implanted layer formed at least in a region to form a source resistance between the source electrode and a two-dimensional electron layer within the gallium indium arsenide mixed crystal semiconductor layer.

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