Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/36 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1237827

- 1 - Abstract A field effect transistor comprises a substrate made of one conductive type or a semiinsulating semiconductor, and working layers formed on the substrate. A source region and a drain region are provided in the working layers, together with a channel region between the source and drain regions, and a gate electrode formed on the channel region. The working layers comprises a first semiconductor layer of Ga In As mixed crystal formed on the substrate and a second semiconductor layer formed on the first semiconductor layer and made of Al In As mixed crystal containing an n type impurity. The density of the impurity is less in a region near the gate electrode and greater in a region near the first semiconductor layer. The resulting transistor has a high transconductance and a high speed of operation.

509517

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