Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

356/149

H01L 29/80 (2006.01) H01L 29/205 (2006.01) H01L 29/43 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1261977

ABSTRACT OF THE DISCLOSURE A field effect transistor comprises an InP substrate, an n-type semiconductor layer formed on the InP substrate, a GaInAs layer formed on the n-type semiconductor layer, no impurities being added to the GaInAs layer, an AlInAs layer formed on the GaInAs layer, a control electrode provided on the AlInAs layer, and a source electrode and a drain electrode provided at both the sides of the control electrode so as to make an ohmic contact to the GaInAs layer.

550121

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