Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 21/335 (2006.01) H01L 29/36 (2006.01) H01L 29/772 (2006.01) H01L 29/778 (2006.01)

Patent

CA 2055164

Abstract of the Disclosure There is disclosed a field effect transistor comprising a channel layer formed of GaInAs and provided with a planar dope layer doped with an impurity in the form of a two-dimensional thin plane a cap layer and a buffer layer formed respectively in contact with the upper and lower faces of the channel layer, the cap layer and buffer layer being formed of GaInAs whose In composition ratio is lower than that of the channel layer first and a second semiconductor layers formed respectively in contact with the cap layer and the buffer layer, first and second semiconductor layers being formed of GaInAs whose In composition ratio is lower than GaAs or the cap layer and the buffer layer.

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