Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 29/10 (2006.01)

Patent

CA 2116266

ABSTRACT OF THE DISCLOSURE This invention provides an FET having a high mobility of channel electrons and a high saturation electron rate. For this purpose, in this invention, an undoped buffer layer, a heavily doped channel layer, and an undoped capping layer are formed on a semi-insulating GaAs semiconductor substrate. An n+-type drain region and an n+-type source region are formed by selective ion implantation. Subsequently, a gate electrode, a drain electrode, and a source electrode are formed. Since the channel layer is formed by gradually increasing the supply quantity of SiH4 gas, an impurity concentration becomes low when the depth from the substrate surface increases. Therefore, since the impurity concentration becomes low at the bottom of the channel layer along which electrons tend to move, an influence of impurity scattering on carriers can be reduced.

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