Field effect transistor

Details Field effect transistor Field effect transistor

H - Electricity

01

L

356/73

H01L 29/76 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1160361

Abstract of the Disclosure A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, the improvement of the FET is that the drain to source saturation current is set at a value of 40 mA or smaller, the length of a second gate which is disposed between a first gate and a drain is 1.5 µm or longer, and furthermore is longer than that of said first gate. The FET has sufficiently low cross-modulation even at a gain reduction of 35 dB.

369585

Affiliated with

Also associated with

Rating

Field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-342216