Field-effect transistor and method for fabricating the same

Details Field-effect transistor and method for fabricating the same Field-effect transistor and method for fabricating the same

H - Electricity

01

L

H01L 21/338 (2006.01) H01L 21/285 (2006.01) H01L 29/08 (2006.01) H01L 29/784 (1990.01)

Patent

CA 2101125

ABSTRACT OF THE DISCLOSURE There is disclosed a process for fabricating a field- effect transistor comprising: a first step of implanting ions in a semiconductor substrate to form an active layer; a second step of forming a dummy gate on the semiconductor substrate, and implanting a dopant in the semiconductor substrate with the dummy gate as a mask to form a first doped layer; a third step of reducing a configuration of the dummy gate, and implanting a dopant in the semiconductor substrate to form a second doped layer; a fourth step of forming an insulating film using said reduced dummy gate; and a fifth step of removing a part of the insulating film on the first doped layer, forming an ohmic electrode in the region with the insulating film removed, lifting off the insulating film using said reduced dummy gate, and forming a gate electrode in the lifted-off region.

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