H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/812 (2006.01) H01L 21/337 (2006.01) H01L 29/10 (2006.01) H01L 29/80 (2006.01)
Patent
CA 2073826
Abstract of the Disclosure A field effect transistor has a gate electrode 15, a source electrode and a drain electrode 15 formed on a GaInAs/GaAs quantum well layer comprising a stock of an undoped GaAs layer, an impurity doped GaInAs layer 3 and an undoped GaAs cap layer, has low resistivity regions 11 formed by ion-implantation in a source regions and the drain regions of the GaInAs/GaAs quantum well layer, has the impurity doped GaInAs layer as a channel, and has a thickness of the undoped GaAs cap layer of 30-50nm. An annealing temperature for activating the low resistivity region 11 is no higher than a temperature at which the GaInAs/GaAs quantum well is not substantially broken and no lower than a temperature at which a sheet resistivity of the low resistivity region 11 is sufficiently reduced. The FET thus manufactured has desired functions of the GaInAs/GaAs quantum well and the low resistivity region 11 and attains a low noise and high speed operation.
Marks & Clerk
Sumitomo Electric Industries Ltd.
LandOfFree
Field effect transistor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1455591