Field effect transistor and method of manufacturing such a...

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H - Electricity

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H01L 29/76 (2006.01) H01L 21/285 (2006.01) H01L 21/76 (2006.01) H01L 27/04 (2006.01) H01L 27/108 (2006.01) H01L 29/08 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1171550

PHN 9858 18 ABSTRACT: A field effect transistor of which source and drain are realized partly as a semiconductor region in the semiconductor body, partly as a part of a deposited epitaxial layer, while the channel region underlies a recess in the substrate. As a result of this construc- tion the channel length is independent of variations in the thickness of the epitaxial layer and the stray capac- itances from source and drain to the substrate are small. Moreover, a conductor pattern, separated from the epi- taxial layer by an insulating layer may extend to beyond the connection zones of source and drain, which involves a high packing density. The epitaxial layer moreover comprises extra wiring tracks; this gives a large free- dom in design.

387558

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