Field-effect transistor and process for fabricating the same

H - Electricity – 01 – L

Patent

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Details

H01L 29/812 (2006.01) H01L 21/335 (2006.01) H01L 21/338 (2006.01) H01L 29/10 (2006.01)

Patent

CA 2089583

ABSTRACT OF THE DISCLOSURE The field-effect transistor according to this invention comprises an active layer containing an impurity in a high concentration and being a thin film, an undoped cap layer formed on the active layer, formed of the same material as the active layer, containing an impurity in a low concentration or no impurity and having a planar surface, a gate electrode and ohmic electrodes formed on the planar cap layer, low ohmic regions to be a source region and a drain region, formed in self-alignment with the gate electrode and containing an impurity in a high concentration. As a result, the disuniformity of the device characteristics resulting from the recess-etching, which has been conventionally found, does not take place. Higher fabrication yields can be attained. Furthermore, since the respective layers and the regions of the FET are formed of the same material, the problem of the diffusion of constituent atoms on the interfaces between the respective layers and the regions is absent, and the interfaces do not deteriorate. In addition, since the low ohmic regions to be the source region and the drain region are formed in self- alignment with the gate electrode, a low source resistance can be attained.

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