Field-effect transistor and the same associated with an...

Details Field-effect transistor and the same associated with an... Field-effect transistor and the same associated with an...

H - Electricity

01

L

345/12, 345/24,

H01L 29/80 (2006.01) H01L 21/20 (2006.01) H01L 27/144 (2006.01) H01L 27/15 (2006.01) H01L 29/10 (2006.01) H01L 29/812 (2006.01) H01S 5/026 (2006.01)

Patent

CA 1274900

ABSTRACT OF THE DISCLOSURE A field-effect transistor comprises a semi- insulating InP substrate, a strained buffer layer of AlXGa1-X As grown on the substrate, and an active layer of GaAs. The active layer is eased in regard to the influence of the lattice mismatching between the active layer and substrate. Such a field-effect transistor is associated with an optical device in a monolithic manner on a common semi-insulating InP substrate.

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