Field effect transistor devices

Details Field effect transistor devices Field effect transistor devices

H - Electricity

01

L

356/128, 356/149

H01L 29/78 (2006.01) H01L 29/40 (2006.01)

Patent

CA 1133149

Abstract of the Disclosure A field effect transistor device is constituted by a semiinsulating substrate consisting of a compound semi- conductor, an N type semiconductor layer formed on the substrate, a plurality of P type semiconductor gate regions aligned along a straight line and extending through the semi- conductor layer to reach the substrate, source and drain electrodes disposed on the semiconductor layer on the opposite sides of the drain regions, a gate electrode connected to said gate regions but insulated from the surface of the semi- conductor layer. Two gate regions on the opposite ends of the array are in contact with the boundary region of the transistor.

350036

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