Field effect transistor for integrated circuits

Details Field effect transistor for integrated circuits Field effect transistor for integrated circuits

H - Electricity

01

L

356/149

H01L 29/80 (2006.01) H01L 21/337 (2006.01) H01L 29/47 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1200621

Abstract of the Disclosure A field effect transistor for integrated circuits has an n-type semiconductor layer, an amorphous silicon region which is formed on a prospective gate region of a major surface of the n-type semiconductor and which contains at least boron, a metal layer deposited on the amorphous silicon region so as to constitute a gate electrode together with the amorphous silicon region, and source and drain electrodes formed on those portions of the major surface of the n-type semiconductor layer which are located at the two sides of the amorphous silicon region.

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