Field-effect transistor having a delta-doped ohmic contact

Details Field-effect transistor having a delta-doped ohmic contact Field-effect transistor having a delta-doped ohmic contact

H - Electricity

01

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356/149

H01L 29/08 (2006.01) H01L 21/203 (2006.01) H01L 29/36 (2006.01) H01L 29/45 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1253633

- 10 - FIELD-EFFECT TRANSISTOR HAVING A DELTA DOPED OHMIC CONTACT Abstract A field-effect transistor is created on a GaAs semi-insulating substrate (e.g. 100) using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi- insulating substrate. A plurality of delta-doped monolayers (e.g. 111, 112, 113, 114, 115) are grown over the surface of the upper undoped layer (e.g. 103) interleaved with layers of GaAs (e.g. 121, 122, 123, 124, 125) having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel (e.g. 127) is etched through the plurality of delta-doped monolayers to permit a gate electrode (e.g. 131) to contact the upper undoped GaAs layer. Source and drain electrode (e.g. 132 and 133)s are deposited over the delta-doped monolayers on each side of the channel. (FIG. 1)

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