Field-effect transistor having a double pulse-doped structure

Details Field-effect transistor having a double pulse-doped structure Field-effect transistor having a double pulse-doped structure

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 21/338 (2006.01) H01L 29/10 (2006.01) H01L 29/80 (2006.01) H01L 29/36 (2006.01)

Patent

CA 2090441

ABSTRACT OF THE DISCLOSURE A buffer layer, a first undoped layer, a first active layer and second undoped layer, a second active layer, a third undoped layer, a cap layer and contact layers are epitaxially grown on a semiconductor substrate in the stated order. A gate electrode is formed in a recess etched groove which formed in the center and reaches the cap layer through the contact layers. A drain electrode and a source electrode are formed on the contact layers and on both sides of the gate electrode.

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