Field effect transistor having improved threshold stability

Details Field effect transistor having improved threshold stability Field effect transistor having improved threshold stability

H - Electricity

01

L

356/77

H01L 29/78 (2006.01)

Patent

CA 1049154

FIELD EFFECT TRANSISTOR HAVING IMPROVED THRESHOLD STABILITY Abstract of the Disclosure An improved field effect transistor device in a monocrystalline semiconductor body provided with source and drain regions and a gate electrode disposed over the channel between the source and drain regions wherein at least the drain region is formed of a first region where the impurity concentration increases with depth with the peak concentration being spaced inwardly from the major surface, and a second region located within the first region having a peak impurity concentration at the major surface. The drain region structure in operation promotes the current flow between the source and drain to flow deeper in the channel region and spaced from the gate dielectric layer. In the method for forming the field effect transistor, an impurity is introduced into the semi.- conductor body underlying at least the ultimate drain region, an epitaxial semiconductor layer deposited, and a second impurity region formed over the first region to form the drain contact. In an alternate embodiment of the method for forming a field effect transistor, a first ion implanta- tion is formed in the drain region, such that the peak impurity concentration is located well within the body - 1 - spaced from the surface thereof, and a second ion implantation, or diffusion, performed forming the source and also the ohmic contact for the drain which is located over the first region and within the first implanted region.

261431

Affiliated with

Also associated with

Rating

Field effect transistor having improved threshold stability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor having improved threshold stability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor having improved threshold stability will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-539089