Field effect transistor structure and method for making same

Details Field effect transistor structure and method for making same Field effect transistor structure and method for making same

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B05D 5/12 (2006.01) H01L 21/28 (2006.01) H01L 21/314 (2006.01) H01L 29/43 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1061014

FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD FOR MAKING SAME ABSTRACT An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.

266616

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