Field effect transistor using diamond

Details Field effect transistor using diamond Field effect transistor using diamond

H - Electricity

01

L

H01L 29/12 (2006.01) H01L 29/10 (2006.01) H01L 29/16 (2006.01) H01L 29/772 (2006.01)

Patent

CA 2158182

A field effect transistor comprises a buffer layer made of a highly resistant diamond on a substrate; an active layer made of conductive diamond on the buffer layer with a dopant concentration such that conduction of carriers is metallically dominated a thickeness such that dopant distribution is two-dimensionally aligned; a cap layer made of a highly resistant diamond on the active layer; a gate electrode layer formed on the cap layer so as to make Schottky contact therewith; and a source electrode layer and a drain electrode layer which make ohmic contact with a laminate structure of said buffer, active and cap layers. The active layer is formed as a .delta.-dope layer or pulse-dope layer doped with a conductive dopant, while being held between both highly resistant buffer and cap layers. When the dopant concentration in the conductive diamond layer is increased, a high gain, can be obtained.

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