Field effect transistor with a high cut-off frequency

Details Field effect transistor with a high cut-off frequency Field effect transistor with a high cut-off frequency

H - Electricity

01

L

356/126

H01L 29/76 (2006.01) H01L 29/205 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1182930

ABSTRACT OF THE DISCLOSURE The invention relates to ultra-high frequency transistors on semiconductors of the III-V compound group. In order to increase the cut-off frequency of Schottky gate transistors, the invention uses for the active part of the channel a first layer of a semi- conductor of a first group and a second layer of a semi- conductor of a second group, the latter having the same crystalline mesh parameter and a wider forbidden band than the semiconductor of the first group. Application to devices and systems operating at ultra-high frequencies.

387748

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