Field effect transistor with a short channel lenght

Details Field effect transistor with a short channel lenght Field effect transistor with a short channel lenght

H - Electricity

01

L

356/149

H01L 21/28 (2006.01) H01L 27/04 (2006.01) H01L 29/10 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1153831

ABSTRACT Disclosed is a field effect transistor with a short effective channel length which can be realized with greater certainty than in known field effect transistors with two gate electrodes. Undesirable capacitances in the transistor can be made small. The transistor comprises a semi- conductor body with source and drain regions and first and second gates which each cover a part of the body between the source and drain regions. The gates are insulated from the body. The first gate is on the source side and extends in the source-drain direction a distance corresponding to the effective channel length of the transistor. The second gate is parti- ally above the first gate and insulated from it. A region of the body between the source and drain which is not covered by the first gate is doped oppositely to the rest of the body.

352698

Affiliated with

Also associated with

Rating

Field effect transistor with a short channel lenght does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with a short channel lenght, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with a short channel lenght will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-452965