Field effect transistor with a short channel length

Details Field effect transistor with a short channel length Field effect transistor with a short channel length

H - Electricity

01

L

356/74

H01L 29/78 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1081368

Abstract of the Disclosure A field effect transistor with a MIS gate arrangement having a source and drain formed in a semiconductor body and including an electrically con- ductive region additionally provided which lies beneath the source zone and which has a conductivity opposite to and/or electrical conductivity which is higher than the semiconductor body which surrounds the zone and in which in the controllable field effect gate the electrically conductive zone is spaced a distance from the gate and the boundary surface and wherein the gate insulation layer projects laterally a space relative to the source zone which is approximately 1 to 10 times the thickness of the gate insulation layer and the distance from the gate arrangement to the boundary surface is 1 to 5 times the thickness.

274075

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