Field effect transistors and fabrication of integrated...

Details Field effect transistors and fabrication of integrated... Field effect transistors and fabrication of integrated...

H - Electricity

01

L

356/149

H01L 29/40 (2006.01) H01L 21/336 (2006.01) H01L 23/485 (2006.01) H01L 23/522 (2006.01) H01L 27/108 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1092253

FIELD EFFECT TRANSISTORS AND FABRICATION OF INTEGRATED CIRCUITS CONTAINING THE TRANSISTORS Abstract of the Disclosure A field effect transistor (FET) wherein the field insulator is nonrecessed with respect to the source and drain regions, wherein the sides of the polysilicon gate electrode are self-aligned with respect to the non- conductive field insulator and neither overlap nor under- lap the field insulator. The lateral dimensions and location of the gate correlate directly with the lateral dimensions and location of the channel region of the FET. The gate fabrication technique employed comprises delineating lithographic patterns twice in the same polysilicon layer; whereby the first lithographic pat- tern delineates regions to be used for sources and drains, and the next lithographic pattern forms the gate regions.

283444

Affiliated with

Also associated with

Rating

Field effect transistors and fabrication of integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistors and fabrication of integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistors and fabrication of integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-345300