H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 51/30 (2006.01) H01L 51/40 (2006.01)
Patent
CA 2427222
A field effect transistor in which a continuous semiconductor layer comprises: a) an organic semiconductor; and, b) an organic binder which has an inherent conductivity of less than 10-6Scm-1 and a permittivity at 1,000 Hz of less than 3.3 and a process for its production comprising: coating a substrate with a liquid layer which comprises the organic semiconductor and a material capable of reacting to form the binder, and, converting the liquid layer to a solid layer comprising the semiconductor and the binder by reacting the material to form the binder.
La présente invention concerne un transistor à effet de champ dans lequel une couche semi-conductrice continue comprend: a) un semi-conducteur organique; et, b) un liant organique d'une conductivité inhérente inférieure à 10?-6¿ Scm?-1¿ pour une constante diélectrique de moins de 3,3 à 1.000 Hz. L'invention concerne également un procédé de production en deux opérations. On commence par enduire le substrat d'une couche liquide comprenant le semi-conducteur organique et un matériau capable de réagir de façon à former le liant. Il ne reste plus qu'à convertir la couche liquide en couche solide comprenant le semi-conducteur et le liant par une réaction du matériau de façon à former le liant.
Brown Beverley Anne
Cupertino Domenico Carlo
Leeming Stephen William
Schofield John David
Veres Janos
Avecia Limited
Merck Patent Gmbh
Smart & Biggar
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