Field effect transistors with ultra short gate

Details Field effect transistors with ultra short gate Field effect transistors with ultra short gate

H - Electricity

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356/73

H01L 29/78 (2006.01) H01L 29/10 (2006.01) H01L 29/20 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1168763

FIELD EFFECT TRANSISTORS WITH ULTRA SHORT GATE ABSTRACT OF THE DISCLOSURE Field effect transistors are provided and more particularly those which work at very high frequencies. According to the invention the field effect transistor has a vertical structure, comprising an access electrode, source or drain, on each of the two faces of the substrate wafer. The gate is formed by an N type epitaxial layer thickness sandwiched between two N+ type layers. The gate thickness is then limited by the epitaxial layer thickness which can be obtained of the order of a few hundred angstroms. The gate contact is taken by means of lateral metal layers, on the chamfered sides of the epitaxial layer.

388883

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