Field-enhanced diffusion using optical activation

Details Field-enhanced diffusion using optical activation Field-enhanced diffusion using optical activation

H - Electricity

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L

H01L 21/26 (2006.01) H01J 9/02 (2006.01) H01L 21/04 (2006.01) H01L 21/22 (2006.01)

Patent

CA 2201112

A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material (14) on a substrate (12) in a vaccum vessel (10) locating an impurity (16) atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N- type diamond semiconductor material.

Procédé de réalisation d'un matériau semi-conducteur faisant appel à une diffusion forcée modifiée. Ce procédé comprend les étapes consistant à placer le matériau semi-conducteur (14) sur un substrat (12) dans une cuve à vide (10), positionner une impureté (16) sur le matériau semi-conducteur, générer un potentiel de haute tension à travers ce matériau, chauffer ce matériau et le bombarder par des photons sous l'effet conjugué de la haute tension et de la chaleur préalablement générées. Ce procédé s'applique particulièrement à la production d'un semi-conducteur diamant du type N.

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