Filling holes and the like in substrates

H - Electricity – 01 – L

Patent

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Details

H01L 21/3205 (2006.01) H01L 21/44 (2006.01) H01L 21/768 (2006.01) H01L 23/50 (2006.01) H01L 23/535 (2006.01) H05K 3/40 (2006.01)

Patent

CA 2171092

A method of filling holes (12) in a layer (11) on a semiconductor wafer (10) is described. An aluminium foil (13) is laid over the layer (11) to close off the holes (12). Elevated temper- atures and pressures are then applied causing localised flow of aluminium into the holes. The foil (13) may be provided with a carrier layer (17) and a barrier or lubricating layer (14 to 16).

L'invention concerne un procédé de remplissage de trous (12) dans une couche (11) d'une tranche de semi-conducteur (10). Une feuille en aluminium (13) est déposée sur la couche (11) de façon à obturer les trous (12). On applique alors des températures et des pressions élevées permettant d'assurer l'écoulement localisé de l'aluminium dans les trous. La feuille (13) peut comporter une couche de support (17) ainsi qu'une couche barrière ou une couche lubrifiante (14 à 16).

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