H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/3205 (2006.01) H01L 21/44 (2006.01) H01L 21/768 (2006.01) H01L 23/50 (2006.01) H01L 23/535 (2006.01) H05K 3/40 (2006.01)
Patent
CA 2171092
A method of filling holes (12) in a layer (11) on a semiconductor wafer (10) is described. An aluminium foil (13) is laid over the layer (11) to close off the holes (12). Elevated temper- atures and pressures are then applied causing localised flow of aluminium into the holes. The foil (13) may be provided with a carrier layer (17) and a barrier or lubricating layer (14 to 16).
L'invention concerne un procédé de remplissage de trous (12) dans une couche (11) d'une tranche de semi-conducteur (10). Une feuille en aluminium (13) est déposée sur la couche (11) de façon à obturer les trous (12). On applique alors des températures et des pressions élevées permettant d'assurer l'écoulement localisé de l'aluminium dans les trous. La feuille (13) peut comporter une couche de support (17) ainsi qu'une couche barrière ou une couche lubrifiante (14 à 16).
Dobson Christopher David
Mcgeown Arthur John
Electrotech Limited
Mcfadden Fincham
LandOfFree
Filling holes and the like in substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Filling holes and the like in substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Filling holes and the like in substrates will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1464181