Filling of vias and contacts employing an aluminum-germanium...

Details Filling of vias and contacts employing an aluminum-germanium... Filling of vias and contacts employing an aluminum-germanium...

H - Electricity

01

L

H01L 21/768 (2006.01) H01L 23/485 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2153680

A multi-step method of filling submicron vias with aluminum includes an initial deposition of about 1000 angstroms of aluminum which is sputter deposited at a temperature of about 150 °C. Subsequently, a layer of an aluminum germanium alloy is deposited, again about 1000 angstroms at 150 °C or less. A third layer of aluminum without germanium is deposited at a temperature of about 150 °C. Approximately 1000 angstroms is deposited. This is followed by a final aluminum deposition which is conducted at 450° to 500 °C to deposit 5000 to 15,000 angstroms of aluminum in total. The two depositions of aluminum, at the relatively low temperature of 150 °C, prevents the germanium from precipitating and also permits the germanium to diffuse into these layers which increases the overall melting temperature of the deposited metal so that at subsequent higher treatment temperatures, the metal does not dewet the via surface.

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