Fine grained, non banded, refractory metal sputtering...

B - Operations – Transporting – 22 – F

Patent

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Details

B22F 1/00 (2006.01) C22C 1/04 (2006.01) C23C 4/12 (2006.01) C23C 14/34 (2006.01)

Patent

CA 2686242

The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

L'invention concerne une cible de pulvérisation présentant une fine structure uniforme à grains équiaxes de moins de 44 microns, sans aucune orientation de texture préférée, après mesure par diffraction rétrodiffusée d'électrons ("EBSD"), et n'affichant aucune formation de bande de taille de grain ni de formation de bande de texture à travers l'ensemble du corps de cible. L'invention concerne une cible de pulvérisation avec une structure de grains lenticulaire ou aplatie, sans aucune orientation de texture préférée après mesure par EBSD et n'affichant aucune formation de bande de taille de grain ou de texture à travers l'ensemble du corps de cible, la cible ayant une structure stratifiée incorporant une couche du matériau de pulvérisation et au moins une couche supplémentaire au niveau de l'interface de plaque de renfort, ladite couche ayant un coefficient de valeur de dilatation thermique ("CTE") comprise entre le CTE de la plaque de renfort et le CTE de la couche de matériau de pulvérisation. L'invention concerne également des films minces et leur utilisation lors de l'utilisation de la cible de pulvérisation et d'autres applications, telles des revêtements, des dispositifs solaires, des dispositifs à semi-conducteur, etc. L'invention concerne de plus un procédé de réparation ou de rajeunissement d'une cible de pulvérisation.

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