Flared and tapered rib waveguide semiconductor laser and...

Details Flared and tapered rib waveguide semiconductor laser and... Flared and tapered rib waveguide semiconductor laser and...

H - Electricity

01

S

H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/10 (2006.01)

Patent

CA 2459313

A semiconductor laser structure based upon a rib waveguide geometry which includes a uniform region (50b) and a flared and tapered region (50a). The uniform region has a generally constant thickness and width. The flared tapered region gradually increases in width and decreases in thickness from the uniform region to a wide end. Fabrication is by selective area epitaxy with dielectric stripes in a dual stripe dielectric mask used to define the two dimensional varying flare in the waveguide changing in thickness as a function of the flare with.

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