Flash memory array with internal refresh

Details Flash memory array with internal refresh Flash memory array with internal refresh

G - Physics

11

C

G11C 16/10 (2006.01) G11C 16/08 (2006.01) G11C 16/16 (2006.01)

Patent

CA 2341706

In a flash memory array, an internal refresh periodically rewrites the information stored in each of the rows of memory cells in a flash memory. The flash memory array includes a refresh pointer bitline that indicates the row to be refreshed. In a first embodiment of the present invention, the internal refresh is performed automatically after every user erase/program cycle. In second and third embodiments, the user of the flash memory array selects when the internal refresh is performed, but the address of the row to be refreshed is supplied internally. In each of the three embodiments, the internal refresh includes the four operations of SCAN, REFRESH ERASE, REFRESH PROGRAM, and INCREMENT.

Selon cette invention, dans une matrice de mémoire flash un rafraîchissement interne récrit périodiquement les informations stockées dans chaque rangée de cellules de mémoire faisant partie de la mémoire flash. La matrice de mémoire flash comprend une ligne binaire de pointeur de rafraîchissement qui indique la rangée à rafraîchir. Dans un premier mode de réalisation de la présente invention, le rafraîchissement interne s'opère automatiquement après chaque cycle de programme/effacement utilisateur. Dans deux autres modes de réalisation, l'utilisateur de la matrice de mémoire flash choisit le moment quand s'opère le rafraîchissement interne, l'adresse de la rangée à rafraîchir étant cependant fournie en interne. Dans chacun des modes de réalisation, le rafraîchissement interne comprend les quatre opérations SCAN, REFRESH ERASE, REFRESH PROGRAM et INCREMENT.

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