Floating gate device using a composite dielectric

Details Floating gate device using a composite dielectric Floating gate device using a composite dielectric

H - Electricity

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352/82.2

H01L 29/78 (2006.01) G11C 11/40 (2006.01)

Patent

CA 1247740

A FLOATING GATE DEVICE USING A COMPOSITE DIELECTRIC Abstract of the Disclosure A nonvolatile floating gate type memory cell wherein the charge transfer dielectric between the substrate and the polycrystalline floating gate in- cludes a composite of silicon dioxide, silicon ni- tride, and silicon dioxide or silicon oxynitride. The silicon dioxide and silicon oxynitride layers are relatively thin and provide charge transfer there- through by Fowler-Nordheim tunneling, while the sili- con nitride layer is relatively thick, characterized by the presence of charge trapping sites, and provides charge transfer therethrough by Poole-Frenkel conduc- tion. The composite dielectric allows the use of relatively low amplitude write/erase voltages of short duration, and exhibits excellent retention and endur- ance characteristics.

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