Floating gate injection field-effect transistor

Details Floating gate injection field-effect transistor Floating gate injection field-effect transistor

G - Physics

11

C

356/149, 352/81

G11C 11/34 (2006.01) H01L 29/10 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1147465

ABSTRACT OF THE DISCLOSURE This invention relates to field-effect tran- sistors comprising a floating gate. The threshold voltage of a transistor such as this may be modified by the injection of electrical charge carriers at an inter- mediate level between the control gate and the substrate which is formed by the floating gate. The structure of the transistor is such that these injections of carriers are punctiform because the production process, which is automatically aligned, allows precise positioning of the overdoped injection regions. Application to electri- cally erased non-volatile memory circuits.

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