Floating gate memories

Details Floating gate memories Floating gate memories

G - Physics

11

C

352/82

G11C 17/00 (2006.01) G11C 16/04 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1327078

FLOATING GATE MEMORIES Abstract A floating gate memory device comprises a channel for conducting carriers from source to drain, a semiconductor heterostructure forming a potential well (floating gate) for confining carriers sufficiently proximate the channel so as to at least partially deplete it, and a graded bandgap injector region between the control gate and the floating gate for controlling the injection of carriers into and out of the potential well. Also described is a three element memory cell, including the memory device and two FETs, which operates from a constant, non-switched supply voltage and two-level control voltages. Arrays of memory devices may also be used to detect light in a variety of applications such as imaging.

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