H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/23, 204/96.3
H01L 31/04 (2006.01) C23C 16/22 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 31/0368 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)
Patent
CA 1226658
ABSTRACT A fluorinated, boron-doped p-type silicon-based semiconductor microcrystalline alloy containing a sufficient concentration of crystalline inclusions to improve material properties substantially and a method of preparing the alloy. Single and multiple cell photovoltaic devices including the alloy in at least one layer exposed to incoming light have improved fill factors and efficiencies.
492118
Guha Subhendu
Kulman James
Ovshinsky Stanford R.
Energy Conversion Devices Inc.
Gowling Lafleur Henderson Llp
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