Fluorinated p-doped microcrystalline semiconductor alloys...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

345/23, 204/96.3

H01L 31/04 (2006.01) C23C 16/22 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 31/0368 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1226658

ABSTRACT A fluorinated, boron-doped p-type silicon-based semiconductor microcrystalline alloy containing a sufficient concentration of crystalline inclusions to improve material properties substantially and a method of preparing the alloy. Single and multiple cell photovoltaic devices including the alloy in at least one layer exposed to incoming light have improved fill factors and efficiencies.

492118

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Fluorinated p-doped microcrystalline semiconductor alloys... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluorinated p-doped microcrystalline semiconductor alloys..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorinated p-doped microcrystalline semiconductor alloys... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1168270

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.