Fluoropolymer interlayer dielectric by chemical vapor...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 21/312 (2006.01) B05D 5/08 (2006.01) B05D 7/14 (2006.01) B05D 7/24 (2006.01)

Patent

CA 2487486

A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.

L'invention concerne un procédé de formation d'une couche de fluoropolymères sur un composant à couches minces. Ce procédé comprend les étapes consistant à : mettre ce composant à couches minces en contact avec un fluoromonomère en phase gazeuse ; et à induire la polymérisation de ce fluoromonomère au moyen d'un initiateur de polymérisation radicalaire, la polymérisation dudit fluoromonomère entraînant la formation d'une couche de fluoropolymères sur le composant à couches minces.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Fluoropolymer interlayer dielectric by chemical vapor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluoropolymer interlayer dielectric by chemical vapor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluoropolymer interlayer dielectric by chemical vapor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1352071

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.