Foam semiconductor dopant carriers

Details Foam semiconductor dopant carriers Foam semiconductor dopant carriers

C - Chemistry, Metallurgy

30

B

148/3, 261/3

C30B 31/00 (2006.01) C30B 31/16 (2006.01)

Patent

CA 1217507

FOAM SEMICONDUCTOR DOPANT CARRIERS ABSTRACT New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n- or p-type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

456086

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