Focused ion beam imaging method

G - Physics – 01 – R

Patent

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Details

G01R 31/302 (2006.01) G01N 23/225 (2006.01) G01R 31/303 (2006.01) G01R 31/307 (2006.01) G06K 9/00 (2006.01) H01J 37/28 (2006.01) H01J 49/26 (2006.01)

Patent

CA 2260510

A method and system for imaging a doped layer of an IC automatically to extract information relating to dopant type is presented. The method employs a focused ion beam (FIB) system to image an exposed substrate layer or polysilicon layer of an integrated circuit. Imaging of a doped layer, results in clearly distinguishable doped regions. Automated extraction of data representative of the regions size, locations, and dopant type is also presented.

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